Our research seeks to address the accelerating demand for high-efficiency, high-power-density power electronic applications through the use of wide band-gap semiconductors (SiC and GaN). This emerging technology enables dramatic improvement in application performance, but also introduces high-frequency artifacts which must be properly managed. The ACES lab seeks to address this challenge by (1) developing compact behavioral models of SiC and GaN devices; (2) pioneering new methods to characterize and model semiconductor packaging; (3) developing reduced-order equivalent circuit models to predict common-mode behavior and electromagnetic interference; and (4) designing, prototyping, and evaluating high-performance converters to demonstrate the concepts discovered through analysis of these models.